The Er-doped Ge1−xSnx thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of Ge1−xSnx films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed Ge1−xSnx thin films.

中文翻译：

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Er掺杂对Ge1-xSnx薄膜结晶的影响

掺铒葛1-X锡X通过热蒸发在 Ge 缓冲的 Si 衬底上制备了不同 Sn 含量的薄膜。Er掺杂对结晶的影响葛1-X锡X研究了不同退火温度下的薄膜。结果表明，Er掺杂可以提高临界结晶温度，大大降低高温退火的表面粗糙度。葛1-X锡X薄膜。