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Design and analysis of low-insertion-loss G-band CMOS four-way Wilkinson power dividers and dual balun
Analog Integrated Circuits and Signal Processing ( IF 1.4 ) Pub Date : 2021-05-14 , DOI: 10.1007/s10470-021-01871-6
Yo-Sheng Lin , Kai-Siang Lan

We present the design and analysis of G-band CMOS Wilkinson power dividers and dual balun for G-band communication and imaging systems. Miniature spiral and U-shaped four-way Wilkinson power dividers, which are based on three two-way Wilkinson power dividers, are designed and implemented. Miniature spiral dual balun, which is equivalent to an upper balun and a lower balun in parallel, is also designed and implemented for comparison. These devices are planar and symmetrical, and their main structure is implemented by the 2.34-µm-thick topmost metal to minimize the resistive loss. This leads to low insertion loss, and small amplitude imbalance (AI) magnitude and phase difference (PD) deviation. For instance, the spiral four-way Wilkinson power divider occupies 0.033 mm2 chip area and achieves S11 of − 11.4 dB, S21 of − 6.271 dB, S31 of − 6.445 dB, S41 of − 6.676 dB, and S51 of − 6.111 dB at 180 GHz, one of the smallest chip areas and lowest insertion losses for four-way power dividers with similar operation frequency. The corresponding AI magnitude and PD deviation are 0.565 dB and 3.2°, respectively. Moreover, the spiral dual balun occupies 0.026 mm2 chip area and achieves S11 of − 10.6 dB, S21 of − 7.549 dB, S31 of − 7.1 dB, S41 of − 7.598 dB, and S51 of − 7.352 dB at 180 GHz. The corresponding AI magnitude and PD deviation are 0.498 dB and 5.7°, respectively. The prominent results of the spiral and U-shaped four-way Wilkinson power dividers, and the spiral dual balun indicate that they are suitable for power division/combination in G-band systems.



中文翻译:

低插入损耗G波段CMOS四路Wilkinson功率分配器和双巴伦的设计与分析

我们介绍了用于G波段通信和成像系统的G波段CMOS Wilkinson功率分配器和双巴伦的设计和分析。设计并实现了基于三个两通威尔金森功率分配器的微型螺旋形和U型四通威尔金森功率分配器。为了比较,还设计并实现了微型螺旋双平衡-不平衡变换器,其等效于并联的上平衡-不平衡变换器和下平衡-不平衡变换器。这些器件是平面且对称的,其主要结构由厚度为2.34μm的最顶层金属实现,以最大程度地降低电阻损耗。这导致较低的插入损耗,以及较小的幅度不平衡(AI)幅度和相位差(PD)偏差。例如,螺旋四通Wilkinson功率分配器占用0.033 mm 2的芯片面积并达到S 11在180 GHz频率下为-11.4 dB,S 21为-6.271 dB,S 31为-6.445 dB,S 41为-6.676 dB和S 51为-6.111 dB,是四芯片组中最小的芯片面积和最低的插入损耗之一具有相似工作频率的单路功率分配器。相应的AI幅度和PD偏差分别为0.565 dB和3.2°。此外,螺旋双平衡-不平衡变换器占据了0.026 mm 2的芯片面积,并实现了-11.6 dB的S 11,-7.549 dB的S 21,-7.1 dB的S 31,-7.598 dB的S 41和S 51在180 GHz时为-7.352 dB。相应的AI幅度和PD偏差分别为0.498 dB和5.7°。螺旋和U形四路Wilkinson功率分配器以及螺旋双巴伦的显着结果表明,它们适用于G频段系统中的功率分配/组合。

更新日期:2021-05-14
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