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Effects of doping Y 2 O 3 on the microstructure and electrical properties of ZnO-Bi 2 O 3− based varistor ceramics
Journal of Electroceramics ( IF 1.7 ) Pub Date : 2021-05-14 , DOI: 10.1007/s10832-021-00238-7
Jiaqi Li , Ke Tang , Shuaijun Yang , Dachuan Zhu

ZnO-based varistor ceramics doped with different amount of Y2O3 have been made by two-step solid-state reaction route including the pre-calcination and subsequent sintering procedures, using nanosized ZnO powder and corresponding additives as the raw material. The phase composition, microstructure and electrical properties were studied by means of X-ray diffractometry (XRD), scanning electron microscopy (SEM) and direct current electrical measurement. It was found that the electrical properties of the varistor ceramics sintered at 950 °C from the powder pre-calcined at 800 °C were enhanced by doped appropriate amount of Y2O3. Particularly, ZnO varistors doped with 1.2 mol% Y2O3 possessed the best comprehensive electrical properties with the breakdown field of 2113 V/mm, the nonlinear coefficient of 184.6 and the leakage current of 0.4 μA. Y2O3 phase, Y-rich phase and the other secondary phase particles were confirmed to distribute along the grain boundaries of predominant ZnO grains from XRD and SEM analyses. The results illustrated that doping Y2O3 should be a promising route to obtain varistor ceramics with excellent electrical properties.



中文翻译:

Y 2 O 3掺杂对ZnO-Bi 2 O 3−压敏陶瓷微观结构和电性能的影响

以纳米ZnO粉体和相应的添加剂为原料,通过包括预煅烧和随后的烧结程序在内的两步固态反应路线,制备了掺有不同量Y 2 O 3的ZnO基压敏陶瓷。通过X射线衍射(XRD),扫描电子显微镜(SEM)和直流电测量研究了相组成,微观结构和电性能。已经发现,通过掺杂适量的Y 2 O 3可以增强从在800°C下预煅烧的粉末在950°C烧结得到的压敏陶瓷的电性能特别是,掺杂1.2 mol%Y 2 O的ZnO压敏电阻。3具有最佳的综合电性能,击穿场为2113 V / mm,非线性系数为184.6,漏电流为0.4μA。通过XRD和SEM分析,证实Y 2 O 3相,富Y相和其他第二相颗粒沿主要ZnO晶粒的晶界分布。结果表明,掺杂Y 2 O 3应该是获得具有优良电性能的压敏陶瓷的有前途的途径。

更新日期:2021-05-14
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