Artifact-free depth profiles of alkali ions in SiO₂ were obtained using a time-of-flight secondary ion mass spectrometer (ToF-SIMS) equipped with a Cs⁺ beam as sputter gun. Samples were set to low temperature (~−100°C) using a heating/cooling sample holder. The effects of temperature on the depth profiles was determined with multiple measurements at different temperatures. To validate the described method, obtained depth profiles of alkali metal implanted SiO₂ samples were compared with simulated depth profiles. Evidence for artifact-free depth profiles is given for potassium, sodium, and lithium, three prominent examples of fast diffusing ions in various materials. This described approach enables more laboratories to acquire depth profiles of alkali metals in non-conducting samples without time-consuming sample preparation. It offers artifact-free depth profiling of alkali metals using a classic ToF-SIMS without advanced extensions, which are not available in many laboratories.

中文翻译：

---

在低温下通过 ToF-SIMS Cs+ 深度分析获得 SiO2 中无伪影的碱金属分布

使用配备 Cs ⁺束作为溅射枪的飞行时间二次离子质谱仪 (ToF-SIMS) 获得SiO ₂中碱离子的无伪影深度分布。使用加热/冷却样品架将样品设置为低温 (~-100°C)。温度对深度剖面的影响是通过在不同温度下的多次测量来确定的。为了验证所描述的方法，获得了碱金属注入的 SiO _{2 的}深度剖面样品与模拟深度剖面进行了比较。钾、钠和锂是各种材料中快速扩散离子的三个突出例子，提供了无伪影深度剖面的证据。这种描述的方法使更多的实验室能够在不耗时的样品制备的情况下获取非导电样品中碱金属的深度剖面。它使用经典的 ToF-SIMS 提供无伪影的碱金属深度分析，无需高级扩展，这在许多实验室中是不可用的。