The performance of praseodymium-doped indium gallium oxide (PrIGO) as the channel layer of thin-film transistors (TFTs) is widely investigated. The TFTs with Pr doping exhibit a remarkable suppression of the light-induced instability including a negligible photoresponse and significant enhancement in negative gate bias stress under illumination (NBITS). The structure, chemical composition, and oxygen vacancy concentration of PrIGO films are analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. In addition, the low-frequency noise test is introduced to analyze the variation of trap density with Pr doping. The results indicate that the trap states induced by Pr doping facilitate the capture of free electrons by positively charged oxygen vacancies under illumination, which leads to the suppression of photoinduced carriers in the conduction band.

中文翻译：

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镨掺杂 InGaO 薄膜晶体管增强的负偏置照明温度稳定性

镨掺杂的氧化铟镓 (PrIGO) 作为薄膜晶体管 (TFT) 的沟道层的性能得到广泛研究。具有 Pr 掺杂的 TFT 表现出对光诱导不稳定性的显着抑制，包括可忽略不计的光响应和光照下负栅极偏置应力 (NBITS) 的显着增强。分别通过 X 射线衍射 (XRD) 和 X 射线光电子能谱 (XPS) 分析了 PrIGO 薄膜的结构、化学成分和氧空位浓度。此外，引入低频噪声测试来分析陷阱密度随Pr掺杂的变化。结果表明，由 Pr 掺杂引起的陷阱态有助于在光照下通过带正电的氧空位捕获自由电子，