The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

中文翻译：

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控制化学机械抛光垫轮廓形状的调节过程的运动学预测和实验演示

化学机械抛光（CMP）工艺中晶片的均匀性对于半导体结构的超细和高集成度至关重要。特别地，与工具相对应的抛光垫的均匀性直接影响抛光均匀性和晶片形状。在这项研究中，通过基于金刚石修整片金刚石磨料的运动密度的运动学模拟来预测CMP抛光垫的轮廓形状。运动学预测被发现与实验测量的垫子轮廓形状非常吻合。基于此，即使在经过护垫的悬垂处理超过2小时之后，也可以将护垫的形状误差保持在10μm以内。