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Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide
IEEE Photonics Journal ( IF 2.4 ) Pub Date : 2021-04-23 , DOI: 10.1109/jphot.2021.3075204
Wei Chen , Xiaojian Fan , Pengfei Li , Yang Gao , Lanting Ji , Xiaoqiang Sun , Daming Zhang

Wideband and polarization-insensitive operation are key issues for electro-optic modulators. An electro-absorption modulator based on graphene-silicon nitride hybrid waveguide has been proposed. Geometric parameters are investigated through finite element method to enhance the interaction between the optical mode and the graphene. For a 200-µm-long hybrid waveguide, a modulation depth (MD) of 20 dB can be obtained when Femi level varies from 0.2 to 0.6 eV. The MD difference between the transversal electric polarization and transversal magnetic polarization (ΔMD) can be restrained to 4 × 10 −3 dB at 1550 nm. A low average ΔMD of 0.2 dB within the wavelength range from 1100 to 1645 nm can be obtained. The 3 dB-bandwidth of 53 GHz and a power consumption is 0.687 pJ/bit can be obtained. The proposed modulator has potentials for on-chip signal processing.

中文翻译:

基于石墨烯-氮化硅混合波导的偏振不敏感电吸收调制器

宽带和偏振不敏感操作是电光调制器的关键问题。提出了一种基于石墨烯-氮化硅混合波导的电吸收调制器。通过有限元方法研究了几何参数,以增强光学模式与石墨烯之间的相互作用。对于200 µm长的混合波导,当Femi电平在0.2至0.6 eV之间变化时,可获得20 dB的调制深度(MD)。可以将横向极化和横向极化的MD差(ΔMD)限制为4×10 -31550 nm时的dB。在1100到1645nm的波长范围内可以获得0.2dB的低平均ΔMD。可以获得53 GHz的3 dB带宽和0.687 pJ / bit的功耗。所提出的调制器具有用于片上信号处理的潜力。
更新日期:2021-05-11
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