The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computer-aided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 μm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 μm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., V _B > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

中文翻译：

---

评估超高压碳化硅引脚二极管的结终端扩展结构；模拟研究

用于超高压（UHV）器件的结终端扩展（JTE）结构占用了半导体芯片面积的很大一部分。JTE领域与芯片性能，工艺良率以及最终的器件成本密切相关。特高压设备的JTE长度（即> 30 kV）仍是未知的，在科学文献中不可见，因此已在此研究中使用基于Sentaurus的技术计算机辅助设计（TCAD）通过二维数值模拟对其进行了预测。 ） 工具。先前报道的空间调制两区JTE（SM-JTE）结构已用作输入来建立合适的TCAD模型，该模型进一步缩放为40 kV级和50 kV级SiC PiN二极管所需的JTE长度。仿真结果表明，SM-JTE的一侧JTE长度为40 kV理论PiN二极管需要27个保护环，而对于50 kV器件则需要2700μm带有36个保护环的单边JTE，导致击穿电压为41.4 kV和分别为51.7 kV。此外，讨论了不同JTE类别的设计注意事项，重点是超高压器件（例如V）中端接结构的适应性。 _B > 30 kV，从而将SM-JTE结构与其他高压JTE设计进行了比较。