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An Improved Nonlinear Model for Millimeter-Wave InP HBT Including DC/AC Dispersion Effects
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2021-03-23 , DOI: 10.1109/lmwc.2021.3068145 Ao Zhang , Jianjun Gao
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2021-03-23 , DOI: 10.1109/lmwc.2021.3068145 Ao Zhang , Jianjun Gao
An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.
中文翻译：
包含DC / AC色散效应的毫米波InP HBT的改进非线性模型
本文提出了一种改进的InP异质结双极晶体管（HBT）的毫米波非线性模型。在Agilent ADS软件的Agilent HBT模型中已经考虑了频率色散效应。通过比较高达110 GHz的实测和仿真直流和S参数进行模型验证。
更新日期：2021-05-11
中文翻译：
包含DC / AC色散效应的毫米波InP HBT的改进非线性模型
本文提出了一种改进的InP异质结双极晶体管（HBT）的毫米波非线性模型。在Agilent ADS软件的Agilent HBT模型中已经考虑了频率色散效应。通过比较高达110 GHz的实测和仿真直流和S参数进行模型验证。
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