Nonequilibrium distribution functions (NDFs) for trap states in the mobility gap under photoillumination and zero bias voltage are derived by a constructed self-consistent drift–diffusion simulator consisting of the Poisson equation and current continuity equations for hydrogenated amorphous silicon (a-Si:H). Regarding the temperature dependence of the NDF, we find that the values of the NDF decrease with increasing temperature (negative temperature dependence) in the energy region near the conduction band for p-type a-Si:H. This is the reverse of the temperature dependence of the equilibrium distribution functions (EDFs) for the trap states in the mobility gap. Furthermore, we show that this new physical characteristic can be applied in explaining the temperature characteristic of the photoconductivity caused by electron hopping in the conduction band tail for a-Si:H. The photoconductivity of a-Si:H decreases with increasing temperature, which is called thermal quenching (TQ). We show that the TQ observed at low temperatures of approximately 200 K for p-type a-Si:H can be explained by the electron hopping model, with the p-type NDF having a negative temperature dependence.

通过构造的自洽漂移-扩散模拟器，由泊松方程和电流连续性方程组成，用于氢化非晶硅（a-Si：H），得出在光照明和零偏置电压下迁移间隙中陷阱态的非平衡分布函数（NDF），该模型由泊松方程和电流连续性方程组成）。关于NDF的温度依赖性，我们发现NDF的值随温度的升高而减小（负温度依赖性），其中p的导带附近的能量区域型a-Si：H。这与迁移率间隙中陷阱状态的平衡分布函数（EDF）对温度的依赖关系相反。此外，我们表明，这种新的物理特性可以用于解释由a-Si：H的导带尾部的电子跳跃引起的光电导的温度特性。a-Si：H的光电导率随温度升高而降低，这称为热猝灭（TQ）。我们表明，p型a-Si：H在大约200 K的低温下观察到的TQ可以通过电子跳跃模型来解释，其中p型NDF具有负温度依赖性。