The aim of this work is to investigate the bulk stability of the solar-grade silicon versus the temperature processing, as well as the surface passivation versus the chemical oxidation. To this end, the quasi-steady-state photo-conductance (QSSPC) measurements showed degradation in minority carrier lifetime (τ_eff) after high-temperature processing that involves instability of the silicon wafers face to the thermal processes. Thereby, the bulk investigations indicated the formation of iron–boron (FeB) pairs. These latter are known to be active recombination centers. The FeB pairs formation was highlighted by a study based on sample illumination technique and the crossover point (∆n_cop) identification in the injection-dependent lifetime curves. The surface passivation using both chemical and thermal oxide was used aiming to study the surface properties, in the presence of a thin layer of SiO₂. The investigations using the hot probe technique revealed the appearance of an inversion layer, leading to type switching of the semiconductor at the surface, going from p- to n-type. This n-layer induces a high surface recombination velocity (SRV), leading to poor surface passivation. This is caused by the diffusion of the phosphorus toward the silicon surface, induced by the presence of a thin layer of SiO₂ in the p-type solar-grade wafers.

这项工作的目的是研究太阳能级硅的整体稳定性与温度处理的关系，以及表面钝化与化学氧化的关系。为此，准稳态光电导（QSSPC）测量显示在少数载流子寿命（τ降解_EFF高温处理之后），其涉及晶片面对着热过程的硅的不稳定。因此，大量研究表明形成了铁硼（FeB）对。后者被称为活性重组中心。所述的FeB对形成通过一个研究基于样本照射技术和交叉点（突出显示的Δn _COP）在取决于喷射的寿命曲线中进行识别。为了研究表面性质，在存在SiO ₂薄层的情况下，使用了同时使用化学和热氧化物进行表面钝化的方法。使用热探针技术的研究揭示了反型层的出现，从而导致了半导体表面的类型转换，从p型变为n型。该n层引起较高的表面复合速度（SRV），从而导致较差的表面钝化。这是由于磷在p型太阳能级晶片中存在SiO ₂薄层而导致的向硅表面的扩散所致。