This paper presents the design of a high-performance 0.45–0.50 THz antenna on chip (AoC) for fabrication on a 100-micron GaAs substrate. The antenna is based on metasurface and substrate-integrated waveguide (SIW) technologies. It is constituted from seven stacked layers consisting of copper patch–silicon oxide–feedline–silicon oxide–aluminium–GaAs–copper ground. The top layer consists of a 2 × 4 array of rectangular metallic patches with a row of subwavelength circular slots to transform the array into a metasurface. This essentially enlarges the effective aperture area of the antenna. The antenna is excited using a coplanar waveguide feedline that is sandwiched between the two silicon oxide layers below the patch layer. The proposed antenna structure reduces substrate loss and surface waves. The AoC has dimensions of 0.8 × 0.8 × 0.13 mm³. The results show that the proposed structure greatly enhances the antenna’s gain and radiation efficiency, and this is achieved without compromising its physical size. The antenna exhibits an average gain and efficiency of 6.5 dBi and 65%, respectively, which makes it a promising candidate for emerging terahertz applications.

中文翻译：

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使用超颖表面和SIW技术在THz无线应用中进行片上天线（AoC）设计

本文介绍了用于在100微米GaAs衬底上制造的高性能0.45–0.50 THz芯片上天线（AoC）的设计。该天线基于超颖表面和基片集成波导（SIW）技术。它由七个堆叠层构成，这些堆叠层由铜补丁-氧化硅-馈电线-氧化硅-铝-GaAs-铜地面组成。顶层由2×4的矩形金属斑块阵列组成，带有一排亚波长圆形缝隙，可将阵列转变为超颖表面。这实质上扩大了天线的有效孔径区域。使用共面波导馈线将天线激励，该馈线夹在贴片层下方的两个氧化硅层之间。所提出的天线结构减少了基板损耗和表面波。AoC的尺寸为0.8×0.8×0.13 mm³。结果表明，所提出的结构极大地提高了天线的增益和辐射效率，并且在不损害其物理尺寸的情况下实现了这一目标。该天线的平均增益和效率分别为6.5 dBi和65％，这使其成为新兴的太赫兹应用的有希望的候选者。