A small size, low-power, self-cascode and self-biased voltage generator based on a PTAT cell for implantable applications is presented. The approach can be extended to other constant temperature applications. A cut-off transistor is used to determine the biasing current and keep the self-cascode cells in the subthreshold region, thus avoiding the use of dedicated startup circuitry. All the transistors are regular threshold voltage devices in order to reduce the impact of process variations on the overall performance. The proposed circuit has been fabricated in a standard CMOS 180 nm technology and the measured total power consumption at an average human body temperature of 36 °C is 152 pW, with a minimum supply voltage of 0.6 V and a total layout area of only 1060 $\mathrm{\mu }$m².

提出了一种基于PTAT电池的小尺寸，低功耗，自共源共栅和自偏置电压发生器，用于可植入应用。该方法可以扩展到其他恒温应用。截止晶体管用于确定偏置电流并将自共源共栅电池保持在亚阈值区域内，从而避免使用专用的启动电路。所有的晶体管都是常规的阈值电压器件，以减少工艺变化对整体性能的影响。拟议的电路采用标准CMOS 180 nm技术制造，在人体平均温度为36°C时测得的总功耗为152 pW，最小电源电压为0.6 V，总布局面积仅为1060 $\mathrm{\mu }$m ²。