In this paper, we simulate the electrical characteristics of the n-type metal-oxide-semiconductor (NMOS) transistor in a 65-nm complementary metal-oxide-semiconductor (CMOS) inverter under the actions of heavy ions with different linear energy transfers (LET). We analyze the influence of incident ions with different LETs on a device using technology computer-aided design (TCAD) software, and aim to establish an HSPICE sub-circuit model containing the relationship between the electrical properties of a device and the LET of an incident ion for circuit-level HSPICE simulation. Based on the SEE funnel mechanism, we propose an analytical model to describe the relationship between the charge collected by the NMOS drain and the LET of the incident ion, and build an HSPICE model based on this analytical model. With such a model, the influence of incident ions with different circuit-level LETs can be determined from HSPICE simulation. In addition, good agreement with simulation results is reached, proving the reasonableness of the proposed model.

在本文中，我们模拟了65nm互补金属氧化物半导体（CMOS）逆变器中n型金属氧化物半导体（NMOS）晶体管在重离子作用下具有不同线性能量转移的电学特性（让）。我们使用技术计算机辅助设计（TCAD）软件分析具有不同LET的入射离子对设备的影响，并旨在建立一个HSPICE子电路模型，其中包含设备的电气特性与事件LET的关系用于电路级HSPICE仿真的离子。基于SEE漏斗机制，我们提出了一个分析模型来描述NMOS漏极收集的电荷与入射离子的LET之间的关系，并在此分析模型的基础上建立了一个HSPICE模型。有了这样的模型，可以通过HSPICE仿真确定具有不同电路级LET的入射离子的影响。另外，与仿真结果吻合良好，证明了所提模型的合理性。