Slurry is widely used in polishing difficult-to-machine materials. However, it is accompanied with some issues, such as the agglomeration of abrasives and high disposal cost. Although using fixed abrasive grains instead of slurry can solve these issues, the problems of wear and of loading fixed abrasive grinding stones, which result in decrease of material removal rate (MRR), also need to be solved. Many researches have been conducted on the self-sharpening of fixed abrasive grinding stones. However, the self-sharpening of grinding stones is not efficient with ultra-low polishing pressure, which is not large enough to break bonds so as to expose new abrasives. In this study, a novel dress-free dry polishing process was proposed, where it combines plasma-assisted polishing and plasma-assisted dressing using Ar-based CF₄ plasma and a vitrified-bonded grinding stone. Polishing experiments were conducted on sintered AlN wafer. Also, as the main component of vitrified bond materials, silica was etched using CF₄ plasma, which is equivalent to the continuous dressing of grinding stone surfaces. Since new abrasives could be constantly exposed, a high MRR was maintained. Thus, a dress-free high integrity polishing process was realized. Moreover, the CF₄ plasma irradiation increased the MRR twice, as CF₄ plasma can not only dress a grinding stone in real time but can also modify AlN to AlF₃, which can easily be removed.

浆料广泛用于抛光难加工的材料。但是，它伴随着一些问题，例如磨料的结块和高昂的处理成本。尽管使用固定的磨料代替泥浆可以解决这些问题，但是还需要解决固定的磨料磨石的磨损和负载问题，这些问题会导致材料去除率（MRR）降低。关于固定磨料磨石的自锐化已经进行了许多研究。但是，在超低抛光压力下，磨石的自锐化效率不高，而抛光压力又不足以打断粘结，从而暴露出新的磨料。在这项研究中，提出了一种新颖的免修整干法抛光工艺，该工艺结合了基于Ar的CF _4的等离子辅助抛光和等离子辅助修整等离子和陶瓷粘结的磨石。在烧结的AlN晶片上进行抛光实验。另外，作为玻璃化结合材料的主要成分，使用CF ₄等离子体蚀刻了二氧化硅，这相当于对石材表面进行连续修整。由于新的磨料可以不断暴露，因此可以保持较高的MRR。因此，实现了无礼服的高完整性抛光工艺。此外，CF ₄等离子体辐射使MRR增大了两倍，因为CF ₄等离子体不仅可以实时修整磨石，还可以将AlN改性为AlF ₃，可以轻松去除。