A vertical RF-MEMS (Radio Frequency Micro ElectroMechanical Switch) switch design is proposed in this work that features a shunt capacitive configuration and can operate at a very low actuation voltage. Besides operating on a low switching voltage, the switch behold a small value of insertion loss in Up (ON) state and offers a towering isolation factor in Down (OFF) state. A horizontal structure of bridge membrane is used in the proposed design and the switch function (with ON and OFF operating states) is provided by the vertical movement of this membrane structure that is controlled by the electrostatic actuation technique. The actuation pad is centrally fed by a Coplanar Waveguide structure. The switch performance has been analysed over a wide frequency range from 1 to 40 GHz. For obtaining a 1.5 μm vertical displacement of the bridge membrane, a sheer 3.0 Volts of pull-in voltage (V_PI) is required. CoventorWare and HFSSv13 tools are used in this work for designing and analysing the proposed switch. The use of fixed-fixed flexure beam configuration is chosen for switch design. Simulation results showcase excellent RF characteristics with isolation factor of −47 dB (at 32.5 GHz) and insertion loss in range of −0.01 to −1.10 dB (for 1−40 GHz frequency).

在这项工作中，提出了一种垂直RF-MEMS（射频微机电开关）开关设计，该开关设计具有并联电容配置，并且可以在非常低的驱动电压下工作。除了在低开关电压下工作之外，该开关在向上（ON）状态下的插入损耗值很小，而在向下（OFF）状态下则提供了较高的隔离系数。在所提出的设计中使用了桥式膜的水平结构，并且通过该膜结构的垂直运动提供了开关功能（具有ON和OFF操作状态），该垂直运动是由静电致动技术控制的。致动垫由共面波导结构集中馈电。已在1至40 GHz的宽频率范围内分析了开关性能。为了获得桥膜的1.5μm垂直位移，_PI）为必填项。在这项工作中，使用CoventorWare和HFSSv13工具来设计和分析所建议的开关。选择使用固定-固定弯曲梁配置进行开关设计。仿真结果显示出出色的RF特性，隔离系数为-47 dB（在32.5 GHz下），插入损耗在-0.01至-1.10 dB的范围内（对于1-40 GHz频率）。