Applied Surface Science ( IF 6.7 ) Pub Date : 2021-05-09 , DOI: 10.1016/j.apsusc.2021.150057 Dongbo Xu , Qijia Ding , Yiyang Zheng , Qincong Li , Fuming Tan , Jinrui Ding , Weidong Shi
The metal active sites in photoelectrode materials have an important role for enhancing water splitting reaction in photoelectrochemistry (PEC). In this work, we used the bimetallic Zn-Co-MOF as the template to fabricate ZnxCo1-xO4 metal oxide on the surface of BiVO4 photoelectrode by electrostatic attraction method with exposure more metal active sites. Therefore, the best Zn0.4Co0.6O4/BiVO4 photoelectrodes showed an excellent photocurrent density with about 3.55 mA/cm2 (1.23 V vs RHE, AM 1.5 G) which was about 3 times than the pure BiVO4 photoelectrode (1.18 mA/cm2, 1.23 V vs RHE) and the onset potential was 0.2 V (RHE) which was the lowest for BiVO4-based photoelectrodes. The PEC performance was enhanced can be mainly attributed to the Zn-Co-MOFs derived Zn0.4Co0.6O4 provided more metal active sites on the surface of Zn0.4Co0.6O4/BiVO4 photoelectrodes and efficiently improved the charge separation in the semiconductor-electrolyte interface. Meanwhile, this work used the electrostatic attraction method supplied a simple method for preparing MOFs derived metallic oxide/semiconductor heterojunction nanocomposites.
中文翻译:
双金属Zn-Co-MOF的静电吸引法制备Zn x Co 1-x O 4 / BiVO 4光电极以实现PEC活性
光电极材料中的金属活性位点对增强光化学(PEC)中的水分解反应具有重要作用。在本文中,我们以双金属Zn-Co-MOF为模板,通过静电吸引法在BiVO 4光电极表面制备了Zn x Co 1-x O 4金属氧化物,并暴露了更多的金属活性位。因此,最好的Zn 0.4 Co 0.6 O 4 / BiVO 4光电电极显示出优异的光电流密度,约为3.55 mA / cm 2(1.23 V vs. RHE,AM 1.5 G),约为纯BiVO 4的3倍。光电电极(1.18 mA / cm 2,相对于RHE为1.23 V ),起始电势为0.2 V(RHE),这是基于BiVO 4的光电电极中最低的。PEC性能的提高主要归因于Zn-Co-MOFs衍生的Zn 0.4 Co 0.6 O 4在Zn 0.4 Co 0.6 O 4 / BiVO 4光电极的表面上提供了更多的金属活性位点,并有效地改善了电极中的电荷分离。半导体-电解质界面。同时,这项工作利用静电吸引方法提供了一种简单的方法来制备MOFs衍生的金属氧化物/半导体异质结纳米复合材料。