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Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-05-07 , DOI: 10.35848/1882-0786/abf94c
Hyewon Du 1 , Seonyeong Kim 1 , Taekwang Kim 1 , Somyeong Shin 1 , Hyeon-kyo Song 1 , Hansung Kim 1 , Dain Kang 1 , Yun Sung Woo 2 , Sunae Seo 1
Affiliation  

In order to fully utilize the excellent electrical properties of graphene as an electrode, it is essential to preserve the nature of pristine graphene. However, structural defects or polymer residues during the conventional fabrication steps are inevitable, severely limiting device performance. To overcome these issues, we used a seamless lateral graphene–graphene oxide (GO)-graphene layer fabricated by oxidation scanning probe lithography as electrodes of the MoS2 field-effect transistor. We demonstrated residue-free and flawless graphene surfaces and furthermore GO interlayer between the MoS2 and gate dielectric reduces interface roughness and screens interface traps, leading to improved electron injection and carrier mobility.



中文翻译:

二维材料/石墨烯范德华异质结构中稳定界面的简易制造

为了充分利用石墨烯作为电极的优异电学性能,必须保留原始石墨烯的性质。然而,传统制造步骤中的结构缺陷或聚合物残留是不可避免的,严重限制了器件的性能。为了克服这些问题,我们使用通过氧化扫描探针光刻制造的无缝横向石墨烯-氧化石墨烯(GO)-石墨烯层作为 MoS 2场效应晶体管的电极。我们展示了无残留且完美无瑕的石墨烯表面,此外,MoS 2和栅极电介质之间的 GO 夹层降低了界面粗糙度并屏蔽了界面陷阱,从而提高了电子注入和载流子迁移率。

更新日期:2021-05-07
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