We report the in-plane anisotropic conductivity of heavily Si-doped GaN (201) prepared by pulsed sputtering deposition and its application to tunneling junction (TJ) contacts on InGaN (201) LEDs. Si-doped GaN (201) yielded a high electron mobility of 109cm²V⁻¹s⁻¹ even at an electron concentration of 1.1נ10²⁰ cm⁻³. The average difference in the in-plane electron mobility along the [014] and [110] directions was small (approximately 9.7%) because of the low stacking fault density. The heavily Si-doped GaN (201) worked as a uniform current spreading layer and hole injection layer through the TJ on InGaN (201) LEDs.

我们报告了通过脉冲溅射沉积制备的重硅掺杂 GaN (20 1)的面内各向异性电导率及其在 InGaN (20 1) LED上的隧道结 (TJ) 接触中的应用。即使在1.1נ10 ²⁰ cm ^-3的电子浓度下，Si掺杂的GaN（20 1）也产生了109cm ² V ^-1 s ^-1的高电子迁移率。由于低堆垛层错密度，沿 [ 014] 和 [1 10] 方向的面内电子迁移率的平均差异很小（约 9.7%）。重掺杂 Si 的 GaN (20 1) 在 InGaN (20 1) LED上通过 TJ 作为均匀的电流扩展层和空穴注入层。