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harge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors
Sensors ( IF 3.9 ) Pub Date : 2021-05-08 , DOI: 10.3390/s21093260
Kjell A. L. Koch-Mehrin , Sarah L. Bugby , John E. Lees , Matthew C. Veale , Matthew D. Wilson

Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material. This has led to the development of a high-flux capable CdZnTe material (HF-CdZnTe). Detectors with the HF-CdZnTe material have shown promising results at mitigating the onset of the polarization phenomenon, likely linked to improved crystal quality and hole carrier transport. Better hole transport will have an impact on charge collection, particularly in pixelated detector designs and thick sensors (>1 mm). In this paper, the presence of charge sharing and the magnitude of charge loss were calculated for a 2 mm thick pixelated HF-CdZnTe detector with 250 μm pixel pitch and 25 μm pixel gaps, bonded to the STFC HEXITEC ASIC. Results are compared with a CdTe detector as a reference point and supported with simulations from a Monte-Carlo detector model. Charge sharing events showed minimal charge loss in the HF-CdZnTe, resulting in a spectral resolution of 1.63 ± 0.08 keV Full Width at Half Maximum (FWHM) for bipixel charge sharing events at 59.5 keV. Depth of interaction effects were shown to influence charge loss in shared events. The performance is discussed in relation to the improved hole transport of HF-CdZnTe and comparison with simulated results provided evidence of a uniform electric field.

中文翻译:

高通量像素化CdZnTe检测器的harging共享和电荷损失

已知碲化镉锌(CdZnTe)检测器由于晶体材料中不良的空穴传输,在高光子通量下会受到偏振效应的影响。这导致了高通量的CdZnTe材料(HF-CdZnTe)的开发。使用HF-CdZnTe材料的检测器在减轻极化现象的发作方面已显示出令人鼓舞的结果,这可能与改善的晶体质量和空穴载流子传输有关。更好的空穴传输将对电荷收集产生影响,特别是在像素化探测器设计和厚传感器(> 1毫米)中。在本文中,计算了结合到STFC HEXITEC ASIC上的2 mm厚像素间距HF-CdZnTe检测器的电荷共享和电荷损耗的大小,该检测器的像素间距为250μm,像素间隙为25μm。将结果与CdTe检测器作为参考点进行比较,并以Monte-Carlo检测器模型的仿真为依据。电荷共享事件在HF-CdZnTe中显示出最小的电荷损失,因此对于59.5 keV的双像素电荷共享事件,其光谱分辨率为1.63±0.08 keV的半峰全宽(FWHM)。相互作用的深度被证明会影响共享事件中的电荷损失。讨论了与改进的HF-CdZnTe空穴传输有关的性能,并与模拟结果进行了比较,从而提供了均匀电场的证据。相互作用的深度被证明会影响共享事件中的电荷损失。讨论了与改进的HF-CdZnTe空穴传输有关的性能,并与模拟结果进行了比较,从而提供了均匀电场的证据。相互作用的深度被证明会影响共享事件中的电荷损失。讨论了与改进的HF-CdZnTe空穴传输有关的性能,并与模拟结果进行了比较,从而提供了均匀电场的证据。
更新日期:2021-05-08
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