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Wide Input Dynamic Range Fully Integrated Capacitive Sensor for Life Science Applications
IEEE Transactions on Biomedical Circuits and Systems ( IF 5.1 ) Pub Date : 2021-04-23 , DOI: 10.1109/tbcas.2021.3075348
Hamed Osouli Tabrizi, Omid Farhanieh, Qiao Owen, Sebastian Magierowski, Ebrahim Ghafar-Zadeh

This paper presents a new fully integrated CMOS capacitance sensor chip with a wider input dynamic range (IDR) compared to the state-of-the-art, suitable for a variety of life science applications. With the novel differential capacitance to current conversion topology, it achieves an IDR of about seven times higher compared to the previous charge based capacitive measurement (CBCM) circuits and about three times higher compared to the CBCM with cascode current mirrors. It also features a calibration circuitry consisting of an array of switched capacitors, interdigitated electrodes (IDEs) realized on the topmost metal layer, a current-controlled 300 MHz oscillator, and a counter-serializer to create digital output. The proposed sensor, fabricated in AMS 0.35 μm CMOS technology, enables a high-resolution measurement, equal to 416 aF, of physiochemical changes in the IDE with up to 1.27 pF input offset adjustment range (IOAR). With a measurement speed of 15 μs, this sensor is among the fast CMOS capacitive sensors in the literature. In this paper, we demonstrate its functionality and applicability and present the experimental results for monitoring 2 μL evaporating droplets of chemical solvents. By using samples of solvents with different conductivity and relative permittivity, a wide range of capacitance and resistance variations in the sample-IDE interface electric equivalent model can be created. In addition, the evaporating droplet test has inherently fast dynamic changes. Based on the results, our proposed device addresses the challenge of detecting small capacitance changes despite large parasitic elements caused by the ions in the solution or by remnants deposited on the electrode.

中文翻译:

用于生命科学应用的宽输入动态范围全集成电容式传感器

本文介绍了一种新的完全集成的 CMOS 电容传感器芯片,与最先进的技术相比,它具有更宽的输入动态范围 (IDR),适用于各种生命科学应用。凭借新颖的差分电容到电流转换拓扑,它实现的 IDR 比之前的基于电荷的电容测量 (CBCM) 电路高约七倍,比具有共源共栅电流镜的 CBCM 高约三倍。它还具有校准电路,包括开关电容器阵列、在最顶层金属层上实现的叉指电极 (IDE)、电流控制的 300 MHz 振荡器和用于创建数字输出的计数器串行器。所提议的传感器采用 AMS 0.35 μm CMOS 技术制造,可实现高分辨率测量,相当于 416 aF,IDE 中的物理化学变化,具有高达 1.27 pF 的输入偏移调整范围 (IOAR)。该传感器的测量速度为 15 μs,是文献中的快速 CMOS 电容式传感器之一。在本文中,我们展示了其功能和适用性,并展示了监测 2 μL 化学溶剂蒸发液滴的实验结果。通过使用具有不同电导率和相对介电常数的溶剂样品,可以在样品-IDE 接口电等效模型中创建大范围的电容和电阻变化。此外,蒸发液滴测试具有固有的快速动态变化。根据结果​​,
更新日期:2021-05-28
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