We report on the growth and characterization of Ge-doped β-Ga₂O₃ thin films using a solid germanium source. β-Ga₂O₃ thin films were grown using a low-pressure chemical vapor deposition reactor with either an oxygen or a gallium delivery tube. Films were grown on 6° offcut sapphire and (010) β-Ga₂O₃ substrates with growth rates between 0.5 and 22 μm/h. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations between 10¹⁷ and 10¹⁹ cm⁻³ were achieved. Low-temperature Hall data revealed a difference in donor incorporation depending on the reactor configuration. At low growth rates, germanium occupied a single donor energy level between 8 and 10 meV. At higher growth rates, germanium doping predominantly results in a deeper donor energy level at 85 meV. This work shows the effect of reactor design and growth regime on the kinetics of impurity incorporation. Studying donor incorporation in β-Ga₂O₃ is important for the design of high-power electronic devices.

中文翻译：

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固体源锗对低压化学气相沉积生长的β-Ga2O3薄膜的N型掺杂

我们对Ge掺杂的β-Ga的生长和表征报告_2层ö ₃使用固体锗源薄膜。的β-Ga ₂ ö ₃薄膜，使用低压化学气相沉积反应器与任一氧或镓输送管生长。薄膜生长于6°斜切蓝宝石和（010）的β-Ga _2个ö ₃基板在0.5和22之间生长速率 μ米/小时。通过控制锗蒸气压，霍尔载流子浓度可在10 ¹⁷  cm 10至10 ¹⁹ cm ^{-3之间变化}实现了。低温霍尔数据揭示了取决于反应器构造的供体掺入的差异。在低增长率下，锗占据了8至10 meV的单个供体能级。在较高的增长率下，锗掺杂主要导致85 meV的更深的供体能级。这项工作表明反应器设计和生长方式对杂质掺入动力学的影响。在的β-Ga研究供体掺入₂ ö ₃是用于高功率电子器件的设计是重要的。