Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship of ZnO[0001]//AlN[0001] and $\mathrm{ZnO}[11\overline{2}0\left]//\mathrm{AlN}\right[11\overline{2}0]$. Omega scans of the (0002) and $(10\overline{1}0)$ reflections of ZnO demonstrate an improving crystalline quality for increasing deposition temperatures. An additional thermal postannealing step at 800 °C is found to be beneficial to further improve the crystal structure.

中文翻译：

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通过原子层沉积使用AlN缓冲层在Si上外延生长高度织构的ZnO薄膜

通过外延AlN缓冲层在100和300°C之间的沉积温度，通过原子层沉积在Si（111）上成功生长出高织构化的ZnO薄膜。X射线衍射分析证明ZnO [0001] // AlN [0001]的外延关系$\mathrm{氧化锌}[11\overline{\mathrm{2个}}0\left]//\mathrm{氮化铝}\right[11\overline{\mathrm{2个}}0]$。欧米茄（0002）和$（10\overline{\mathrm{1个}}0）$ZnO的反射表明，随着沉积温度的升高，晶体质量得到了改善。发现在800°C的附加热后退火步骤有利于进一步改善晶体结构。