In this study, plasma-enhanced atomic layer deposited indium oxide (InO_x) films were analyzed using a new [dimethylbutylamino]trimethylindium (DATI) liquid precursor and Ar/O₂ plasma. The growth property using the DATI precursor, such as growth per cycle, is relatively higher (≥1.0 Å/cycle) than other precursors even in low deposition temperatures (100–250 °C). In addition, impurities (C and N) in the thin films were below the XPS detection limit. Because the number of oxygen vacancies that generate carriers in the InO_x thin films increased with the deposition temperature, the carrier concentration (2.7 × 10¹⁸–1.4 × 10¹⁹ cm⁻³) and Hall mobility (0.3–1.1 cm²/V s) of the InO_x thin film were increased. InO_x channel based staggered bottom gate structure thin film transistors (TFTs) were fabricated, and their switching performance were studied. Because the InO_x films were deposited with high purity, the electrical properties of TFTs show superior switching performance in terms of saturation mobility (17.5 cm²/V s) and I_on/I_off ratio (2.9 × 10⁹). Consequently, InO_x films deposited with DATI have the potential to be widely used in indium oxide semiconductors, especially backplane TFTs.

中文翻译：

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使用用于薄膜晶体管的新型二甲基丁基氨基-三甲基铟前体的等离子体增强原子层沉积的氧化铟膜

在这项研究中，使用新的[二甲基丁基氨基]三甲基铟（DATI）液体前驱体和Ar / O ₂等离子体分析了等离子体增强的原子层沉积的氧化铟（InO _x）膜。即使在较低的沉积温度（100–250°C）下，使用DATI前体的生长特性（例如，每个周期的生长）也相对高于其他前体（≥1.0Å/周期）。此外，薄膜中的杂质（C和N）低于XPS检测极限。因为随着沉积温度的升高，在InO _x薄膜中产生载流子的氧空位数量增加，所以载流子浓度（2.7×10 ¹⁸ –1.4×10 ¹⁹  cm ^-3）和霍尔迁移率（0.3–1.1 cm ²InO _x薄膜的/ V s）增加。制备了基于InO _x通道的交错底栅结构的薄膜晶体管（TFT），并研究了它们的开关性能。由于以高纯度沉积了InO _x膜，因此TFT的电性能在饱和迁移率（17.5 cm ² / V s）和I _on / I _off比（2.9×10 ⁹）方面显示出优异的开关性能。因此，用DATI沉积的InO _x膜具有被广泛用于氧化铟半导体，尤其是背板TFT的潜力。