Indium tin oxide (ITO) thin films were grown by Ar ion beam sputter deposition under systematic variation of ion energy, geometrical parameters, and O${}_2$ background pressure and characterized with regard to the film thickness, growth rate, crystalline structure, surface roughness, mass density, composition, electrical, and optical properties. The growth rate shows an over-cosine, forward-tilted angular distribution with a maximum, which increases with increasing ion energy, increasing ion incidence angle, and decreasing O${}_2$ background pressure. ITO films were found to be amorphous with a surface roughness of less than 1 nm. Mass density and composition show only small changes with increasing scattering angle. The electrical resistivity behavior in dependence on the process parameters is complex. It is not only driven by the O${}_2$ background pressure but also very much by the scattering angle. The observed behavior can be understood only if competing processes are considered: (i) reduction of the number of oxygen vacancies due to the presence of O${}_2$ background gas and (ii) defect generation and preferential sputtering of oxygen at the surface of the growing films due to the impact of high-energy scattered particles. Even though absolute numbers differ, optical characterization suggests a similar systematics.

中文翻译：

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Ar离子束溅射沉积生长铟锡氧化物薄膜的性能

在离子能量，几何参数和O的系统变化下，通过Ar离子束溅射沉积法生长了铟锡氧化物（ITO）薄膜。${}_{\mathrm{2个}}$背景压力，并根据膜厚度，生长速率，晶体结构，表面粗糙度，质量密度，组成，电学和光学特性进行表征。增长率显示出余弦最大的前倾角分布，该分布随离子能量的增加，离子入射角的增加和O的减小而增加${}_{\mathrm{2个}}$背景压力。发现ITO膜是无定形的，其表面粗糙度小于1nm。质量密度和组成随散射角的增加仅显示出很小的变化。取决于工艺参数的电阻率行为是复杂的。它不仅由O驱动${}_{\mathrm{2个}}$背景压力也非常受散射角的影响。仅当考虑竞争过程时，才能理解所观察到的行为：（i）由于存在O而减少了氧空位的数量${}_{\mathrm{2个}}$背景气体和（ii）由于高能散射粒子的影响，缺陷的产生以及在生长膜表面的氧气优先溅射。即使绝对数字不同，光学表征也表明了类似的系统。