β-Ga₂O₃, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of β-Ga₂O₃ to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size β-Ga₂O₃ sheets using a liquid gallium squeezing technique. The GaO_x nanolayer produced by stamping liquid gallium under the Cabrera–Mott oxidation was converted into few-atom-thick β-Ga₂O₃ via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO₂, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D β-Ga₂O₃ on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a β-Ga₂O₃ layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional β-Ga₂O₃ growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.

中文翻译：

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液体镓挤压技术大规模合成超薄带隙原子的β-Ga2O3

的β-Ga ₂ ö ₃，一个新兴的超宽带隙（UWBG）半导体，提供有前途的下一代电力电子，化学传感器，和太阳能光电盲性。缩放的的β-Ga向下₂ ö ₃到原子水平，得到的二维（2D）的材料的优点，同时保持母体散装对方的固有性质。在这里，我们展示了一个简单的方法来合成超薄毫米尺寸的β-Ga _2个ö ₃使用液体镓挤压技术片材。高氏_X通过冲压Cabrera的-莫特氧化下液态镓产生的纳米层转化成几个原子厚的β-Ga ₂ ö ₃通过在大气条件下进行热退火。这种方法也适用于各种基材如SiO ₂，硅，石墨烯，石英和蓝宝石到异质合成2D的β-Ga ₂ ö ₃在目标基板上。最后，我们提出了一种图案化策略相结合的常规光刻的挤压技术，得到的β-Ga ₂ ö ₃层具有可控的厚度和形状。我们的合成方法有可能克服传统的β-Ga的限制的电势₂ ö ₃生长的方法，从而为在基于UWBG-（光磁）与电子以具有成本效益的方式高吞吐量应用的路径。