p-Type silicon solar cells with a structure of passivated emitter and rear cell (PERC) are a mainstream product of the photovoltaic (PV) industry. Because of its low cost, PERC technology will continue to be dominant for a long time. One of the key features to improve PERC solar cell performance is the use of a selective emitter (SE), which is now mainly realized by laser doping (LD). However, SE by LD still cannot perfectly resolve recombination underneath the front metallized area. The use of a tunnel oxide passivated contact (TOPCon) can dramatically reduce recombination at the metallized area. With the help of an organic mask and etching by texturing solution, the TOPCon SE structure on PERC cells is realized. An average efficiency of 22.65% is reached on 6 in., commercial grade p-type Czochralski wafers. The average open-circuit voltage of PERC cells with TOPCon SE is 14.6 mV higher than LD SE. However, the short-circuit current is lowered by parasitic absorption of polysilicon of alignment margins, which makes cell efficiency of the two SE structures almost the same. With improved alignment precision, TOPCon SE will provide an increase in efficiency.

中文翻译：

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钝化发射极和带有前多晶硅钝化接触选择性发射极的后电池硅太阳能电池

具有钝化发射极和背面电池（PERC）结构的p型硅太阳能电池是光伏（PV）行业的主流产品。由于成本低廉，PERC技术将在很长一段时间内继续占据主导地位。提高 PERC 太阳能电池性能的关键特征之一是使用选择性发射极 (SE)，现在主要通过激光掺杂 (LD) 实现。然而，LD 的 SE 仍然不能完美地解决前金属化区域下方的复合。使用隧道氧化物钝化触点 (TOPCon) 可以显着减少金属化区域的复合。借助有机掩模和纹理化溶液蚀刻，实现了PERC电池上的TOPCon SE结构。6 英寸商业级 p 型直拉晶片的平均效率达到 22.65%。带有 TOPCon SE 的 PERC 电池的平均开路电压比 LD SE 高 14.6 mV。然而，由于对准边缘的多晶硅的寄生吸收降低了短路电流，这使得两种SE结构的电池效率几乎相同。随着对准精度的提高，TOPCon SE 将提高效率。