Van der Waals layered materials have attracted much attention due to their unique properties and potential applications in (photoelectric) electronic devices. In this paper, a fast and economical method for growing high quality α-HgI₂ single crystal is reported, which provides a feasible idea for preparing monolayer or two-dimensional α-HgI₂. According to our research, the low-temperature (80 K) photoluminescence (PL) spectrum of α-HgI₂ shows a PL emission that is bright and sharp with a full width at half maximum (FWHM) of only 6.56 nm at 537.2 nm which is smaller than that of other van der Waals layered materials at low temperature. Furthermore, with the increase of temperature (80 K–200 K), it is found that PL emission peak strength decreases accordingly. Our work has done a research and investigation on the application prospects of α-HgI₂ in laser devices and green LED devices.

范德华层状材料因其独特的性能和在（光电）电子设备中的潜在应用而备受关注。在本文中，用于生长高品质α-HGI的快速且经济的方法₂单晶报道，其提供了用于制备单层或二维α-HGI一个可行的想法₂。根据我们的研究，所述低温度（80 K）的光致发光（PL）光谱的α-HGI ₂显示出PL发光明亮且清晰，在537.2 nm处的半峰全宽（FWHM）仅6.56 nm，比低温下的其他范德华层状材料的半峰宽小。此外，发现随着温度的升高（80 K–200 K），PL发射峰强度相应降低。我们的工作已经做了α-HGI的应用前景的研究和调查₂中的激光器件及绿色LED器件。