In the present work, the effect of the oxygen partial pressure (OPP) has been studied on the electronic structure of the Ce_0.95Fe_0.05O_2-δ thin film (TF) through Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The varying OPP, from 200 mTorr to 1 mTorr, was observed to vary the oxidation conditions during TF deposition. The oxygen valency was estimated to be reduced along with the generation of oxygen vacancies as determined via Raman analysis. The AFM analysis revealed the lowered values of the roughness parameters which indicated that reduction in OPP is associated with the smoothness of the film surface. The film surface was found to be reduced, as characterized by XPS investigation, as a result of the change in valency of Ce from +4 to +3 due to reduced OPP. The concentration of Ce³⁺ state was estimated to increase from 19.5% to 33% with reducing OPP. This evidently supports the formation of oxygen vacancies since the reduction of the valence state of Ce is known to be accompanied by the generation of oxygen vacancies. The O1 s spectra confirmed the oxygen non-stoichiometry as a function of OPP, whereas, Fe 2p suggested the mixed-valence state of Fe (Fe²⁺/Fe³⁺) in Ce_0.95Fe_0.05O_2-δ (TF). To put in brief, the variation in OPP affects the chemical composition of the material by modifying its electronic structure via controlling the exchange interactions in the core structure of the compound.

在目前的工作中，已经研究了氧分压（OPP）对Ce _0.95 Fe _0.05 O2 _-δ的电子结构的影响。拉曼光谱，原子力显微镜（AFM）和X射线光电子能谱（XPS）来形成薄膜（TF）。观察到从200 mTorr到1 mTorr的变化OPP会改变TF沉积过程中的氧化条件。通过拉曼分析确定，氧价随着氧空位的产生而降低。AFM分析显示出粗糙度参数的降低值，这表明OPP的降低与膜表面的光滑度有关。XPS研究表明，由于OPP降低，Ce的价数从+4变为+3，因此发现薄膜表面减少。Ce ³⁺的浓度随着OPP的减少，状态估计将从19.5％增加到33％。这显然支持氧空位的形成，因为已知Ce的价态的降低伴随着氧空位的产生。O 1 s光谱证实了氧的非化学计量是OPP的函数，而Fe 2p则表明Fe（Fe ²⁺ / Fe ³⁺）在Ce _0.95 Fe _0.05 O2 _-δ（TF）中的混合价态。简而言之，OPP的变化会通过控制化合物核心结构中的交换相互作用来改变其电子结构，从而影响材料的化学组成。