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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs
IEEE Open Journal of Power Electronics Pub Date : 2021-04-12 , DOI: 10.1109/ojpel.2021.3072503
Juefei Yang , Saeed Jahdi , Bernard Stark , Olayiwola Alatise , Jose Ortiz-Gonzalez , Phil Mellor

In this paper, performance at 1 st and 3 rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1 st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperature coefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3 rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiC MOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.

中文翻译:

对称和非对称双沟道SiC功率MOSFET的第一和第三象限瞬态分析

在本文中,在1性能 ST和3 RD硅和碳化硅(SiC)的对称和不对称双沟槽,超结和平面功率MOSFET的象限操作通过广泛使用紧凑模型实验测量的分析。器件在高压钳位电感开关测试设备上进行评估,并在升高的结温下以一定的开关速率进行开关。实验表明,在 第一个象限,CoolSiC(SiC非对称双沟槽)MOSFET和SiC对称双沟槽MOSFET表现出更稳定的温度系数。硅超结MOSFET由于输入电容大而具有最低的关断开关速率。经过评估的SiC平面MOSFET由于其较高的输入电容而在导通开关时也表现欠佳,并且由于其较低的阈值电压而具有更高的温度灵敏度。在 第三象限中,与SiC MOSFET相比,硅超结MOSFET相对较大的反向恢复电荷会对关断瞬态产生负面影响。还可以看出,在SiC MOSFET中,两个双沟槽MOSFET结构在反向恢复方面胜过所选的SiC平面MOSFET。
更新日期:2021-05-07
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