Ultraviolet detectors are widely used in space exploration, military affairs, and disinfection. To further improve the responsivity and response time, we propose and demonstrate AlN three-dimensional metal-semiconductor-metal (3D-MSM) and flip chip 3D-MSM (FC-3DMSM) ultraviolet detector here. The performance of devices with different etching depth and electrode spacing has been investigated using APSYS simulation. According to the simulation results, we fabricated $0.5~\mu \text{m}$ -etched 3D-MSM (3D-MSM- $0.5~\mu \text{m}$ ) and $1.3~\mu \text{m}$ -etched FC-3DMSM (FC-3DMSM- $1.3~\mu \text{m}$ ) devices. Response time is decreased by 29.3% and 13.8% for 3D-MSM- $0.5~\mu \text{m}$ and FC-3DMSM- $1.3~\mu \text{m}$ devices, and responsiveness exhibits a 20.5% and 46.6% improvement at 200nm, compared with traditional MSM device. This is due to varied internal electric field distribution of 3D-MSM and FC -3DMSM device configuration, which accelerates the collection of photo-generated carriers and improves the carrier collection efficiency. Our work should advance the development of nitrides ultraviolet detectors.

中文翻译：

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3D-MSM AlN深紫外检测器

紫外线探测器广泛用于太空探索，军事和消毒。为了进一步提高响应速度和响应时间，我们在这里提出并演示了AlN三维金属半导体金属（3D-MSM）和倒装芯片3D-MSM（FC-3DMSM）紫外线检测器。使用APSYS仿真研究了具有不同蚀刻深度和电极间距的器件的性能。根据仿真结果，我们制作了 $ 0.5〜\ mu \ text {m} $ 蚀刻3D-MSM（3D-MSM- $ 0.5〜\ mu \ text {m} $ ） 和 $ 1.3〜\ mu \ text {m} $ 蚀刻的FC-3DMSM（FC-3DMSM- $ 1.3〜\ mu \ text {m} $ ） 设备。3D-MSM-的响应时间减少了29.3％和13.8％ $ 0.5〜\ mu \ text {m} $ 和FC-3DMSM- $ 1.3〜\ mu \ text {m} $ 与传统的MSM装置相比，在200nm处的响应度分别提高了20.5％和46.6％。这是由于3D-MSM和FC -3DMSM设备配置的内部电场分布不同，这加速了光生载流子的收集并提高了载流子收集效率。我们的工作应促进氮化物紫外线探测器的发展。