It has been a challenging task for the designers to implement on-chip bandpass filter at high frequency with better performance. In this paper, a tunable RF bandpass filter using double resistive feedback floating active inductor (AI) based on gyrator-C topology has been proposed using 40 nm CMOS technology for 5 GHz WLAN applications. Small signal analytical modelling determines the design parameters affecting the performance of proposed floating AI, which ascertains that the double resistive feedback increases the quality factor as well as inductance value. The proposed AI attains a maximum quality factor of 964, high inductance ranging from 420 to 2080 nH and wide inductive bandwidth varying from 550 MHz to 7.85 GHz. Total current drawn by the AI is 2.66 mA at 1.2 V power supply and occupies an area of 17.1 × 9.1 µm². In order to validate the performance of AI, a second-order tunable bandpass filter with frequency range 5.15–5.35 GHz has been implemented, with a small fractional 3-dB bandwidth, quality factor and 1-dB compression point of 15 MHz, 346 and − 2.8 dBm respectively. The Bandpass filter attains the figure of merit of 92.16 dB and dynamic range of 150 dB-Hz.

对于设计人员来说，以更高的性能实现高频率的片上带通滤波器一直是一项艰巨的任务。本文针对40 GHz CMOS技术，提出了一种基于回旋器C拓扑的双电阻反馈浮动有源电感（AI）的可调谐RF带通滤波器，用于5 GHz WLAN应用。小信号分析建模确定了影响建议的浮动AI性能的设计参数，从而确定了双电阻反馈会提高品质因数以及电感值。拟议中的AI可以达到964的最高品质因数，420至2080 nH的高电感以及550 MHz至7.85 GHz的宽电感带宽。AI在1.2 V电源下消耗的总电流为2.66 mA，占地17.1×9.1 µm ²。为了验证AI的性能，已实现了频率范围为5.15–5.35 GHz的二阶可调带通滤波器，其小部分3-dB带宽，品质因数和1-dB压缩点分别为15 MHz，346和−分别为2.8 dBm。带通滤波器的品质因数为92.16 dB，动态范围为150 dB-Hz。