Abstract

A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-μm thick polycrystalline diamond. The possibility of epitaxial growth of nitride heterostructures on silicon–polycrystalline diamond substrates with characteristics at the level of heterostructures on silicon substrates is shown. The test transistors demonstrated the following: saturation current density of more than 1 A/mm and breakdown voltage of more than 90 V. The achieved results open up opportunities for the emergence of a new class of silicon-polycrystalline diamond substrates and the creation of powerful gallium nitride transistors with previously unattainable characteristics.

中文翻译：

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复合硅多晶金刚石基板上的氮化物异质结构和高电子迁移率晶体管

摘要

提出了一种用于生长氮化物异质结构的新型衬底，该衬底由125 nm厚的硅层和290μm厚的多晶金刚石组成。示出了在硅多晶金刚石基板上外延生长具有在硅基板上异质结构水平上的特性的氮化物异质结构的可能性。测试晶体管表现出以下特性：饱和电流密度大于1 A / mm，击穿电压大于90V。获得的结果为新型硅多晶金刚石基板的出现和强大功率的产生提供了机会。具有以前无法达到的特性的氮化镓晶体管。