Titanium alloys have been widely used in many high-end components and parts in various fields, and the excellent surface quality of titanium alloys is highly required. In this study, chemical mechanical polishing (CMP) was used as an effective surface processing technology, and the effects of pH and H₂O₂ on the CMP performance of titanium alloys TA2 (pure titanium) and TC4 (Ti-6Al-4 V) were thoroughly investigated. It is shown experimentally that TA2 and TC4 perform the similar CMP performance as a function of either pH or H₂O₂. As pH increases from 4 to 10, the material removal rate (MRR) decreases while the surface roughness R_a increases; At pH 4, as the H₂O₂ concentration increases, the MRR first rapidly increases, reaches the summit at approximately 0.05 wt% H₂O₂, and then gradually decreases, while the R_a first decreases and then slightly increases. An optimal polishing performance can be achieved at 0.05 wt% H₂O₂ and pH 4. By characterizing the surface films of TA2, it is revealed that an oxide film with 3-4 nm thickness is formed after polishing, and the crystal structure of the underneath substrate remains complete without damage. The oxide film consists of two layers. The H₂O₂-dependent CMP performance can be attributed to the change of the outer oxide layer. Specifically, by adding 0.05 wt% H₂O₂, the oxide film can be rapidly formed, matching with the abrasion, and the outer oxide layer becomes compact, and thus the MRR increases and the R_a decreases. The findings can provide a feasible CMP process for titanium alloys to achieve a satisfactory polishing performance.

钛合金已经广泛地用于各个领域的许多高端部件中，并且高度需要钛合金的优异的表面质量。在这项研究中，化学机械抛光（CMP）被用作一种有效的表面处理技术，pH和H ₂ O ₂对钛合金TA2（纯钛）和TC4（Ti-6Al-4 V）的CMP性能的影响）进行了彻底的调查。实验表明，TA2和TC4作为pH或H ₂ O ₂的函数具有相似的CMP性能。当pH从4增加到10时，材料去除率（MRR）降低，而表面粗糙度R _a增加；当表面粗糙度R _a增加时，材料去除率降低。在pH 4下，作为H ₂ O₂浓度增加，MRR首先迅速增加，在大约0.05 wt％H ₂ O ₂处达到峰，然后逐渐降低，而R _a先降低然后略有增加。在0.05 wt％H ₂ O ₂和pH 4时，可以获得最佳的抛光性能。通过表征TA2的表面膜，可以发现抛光后形成了厚度为3-4 nm的氧化膜，并且其晶体结构下方的底材保持完整而无损坏。氧化膜由两层组成。H ₂ O ₂取决于CMP的性能可以归因于外部氧化物层的变化。具体地，通过添加0.05重量％的H ₂ O ₂，可以快速形成氧化膜，与磨损相匹配，并且外部氧化层变得致密，因此MRR增加并且R _a减小。这些发现可以为钛合金提供一种可行的CMP工艺，以获得令人满意的抛光性能。