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Test-beam characterisation of the CLICTD technology demonstrator - A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment ( IF 1.4 ) Pub Date : 2021-05-05 , DOI: 10.1016/j.nima.2021.165396
R. Ballabriga , E. Buschmann , M. Campbell , D. Dannheim , K. Dort , N. Egidos , L. Huth , I. Kremastiotis , J. Kröger , L. Linssen , X. Llopart , M. Munker , A. Nürnberg , W. Snoeys , S. Spannagel , T. Vanat , M. Vicente , M. Williams

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of 16 × 128 detection channels measuring 300 μm×30 μm. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a spatial resolution down to (4.6±0.2)  μm is measured. A time resolution down to (5.8±0.1)  ns is observed, after applying an offline time-walk correction using the pixel-charge information. The hit detection efficiency is found to be well above 99.7 % for thresholds of the order of several hundred electrons.



中文翻译:

CLICTD技术演示器的测试束表征-具有同时测量时间和能量的小型收集电极高电阻率CMOS像素传感器

CLIC跟踪器检测器(CLICTD)是单片像素传感器。它是在180 nm CMOS成像工艺中制造的,并通过附加的深低剂量n型注入进行了修饰,以获得完全的横向耗尽。该传感器具有一个小的收集二极管,这对于实现低输入电容至关重要。CLICTD传感器在紧凑型线性对撞机(CLIC)的跟踪检测器研究中被设计为技术演示器。除了CLIC以外,对于HL-LHC跟踪检测器升级,其设计特性也引起了广泛关注。它具有两种不同的像素口味:一种具有连续的深n型注入,一种具有分段的n型注入,以确保快速收集电荷。像素矩阵包括16×128的检测通道的测量300 微米×30 微米 每个检测通道被分成八个子像素,以减少数字电路的数量,同时保持较小的收集电极间距。本文介绍了CLICTD传感器在粒子束中的表征结果。通过同时使用阈值时间和到达时间测量功能,可以对不同的像素风格进行详细比较。最值得注意的是,空间分辨率低至46±02个  测得μm。时间分辨率低至58±01个  在使用像素电荷信息应用离线时程校正后,观察到ns。发现对于 几百个电子的阈值,命中检测效率远高于99.7 %。

更新日期:2021-05-12
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