This paper presents a novel step structure of RF MEMS switch with and without uniform, non-uniform serpentine meanders, having square perforations which results with a low actuation voltage. Here, design, study, and simulation of the proposed device are evaluated in the FEM tool. By changing the span beam length of the serpentine meanders from results owing to low spring constant and a low pull-in voltage of the device as a specific length of the serpentine meander section increases. By changing the actuating area of the device by using with and with-out meandering techniques such as uniform and non-uniform serpentine type sections are also evaluated. Material optimization for beam and dielectric layer of the device also performed using Ashby’s approach. The actuation voltage is obtained as 1.51 V, the switch with a lower spring constant demonstrates a trade-off with a higher switching speed of 0.2–0.45 µm. The device with a non-uniform single meander result in high isolation is – 72.4 dB at 27 GHz obtained in downstate of the step structure. The insertion loss of the proposed switch is below – 0.02 dB, and the return loss received below – 38.2 dB in the frequency range 1–30 GHz. The capacitance analysis such as up and downstate capacitance as well as the stress analysis are evaluated for the proposed meandered switch.

本文提出了一种RF MEMS开关的新型阶梯结构，该结构具有和不具有均匀，不均匀的蛇形曲折，具有方形穿孔，从而产生较低的驱动电压。在此，在FEM工具中评估了所建议设备的设计，研究和仿真。由于蛇形弯曲部分的特定长度增加，因此由于弹簧常数低和装置的吸入电压低，可通过改变蛇形弯曲的跨度束长度来获得结果。通过使用和不使用曲折技术（例如均匀和不均匀的蛇形截面）来改变设备的驱动区域。还使用Ashby的方法对器件的梁和介电层进行了材料优化。激活电压为1.51 V，弹簧常数较低的开关表现出较高的权衡，开关速度较高，为0.2–0.45 µm。具有非均匀单曲折的器件导致高隔离度，在阶跃结构的下降状态下，在27 GHz时为– 72.4 dB。在1–30 GHz频率范围内，建议的开关的插入损耗低于– 0.02 dB，接收到的回波损耗低于– 38.2 dB。针对所提议的曲折开关评估了电容分析（例如上，下状态电容）以及应力分析。在1–30 GHz频率范围内为2 dB。针对所提议的曲折开关评估了电容分析（例如上，下状态电容）以及应力分析。在1–30 GHz频率范围内为2 dB。针对所提议的曲折开关评估了电容分析（例如上，下状态电容）以及应力分析。