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GaAs periodic half octagonal cut based nano texturized hexagonal shaped nanopillar array structure for highly responsivephotodetector’s performance
Optical and Quantum Electronics ( IF 3 ) Pub Date : 2021-05-05 , DOI: 10.1007/s11082-021-02951-7
Smriti Baruah , Santanu Maity , Joyatri Bora

Efficient light absorption is the most crucial factor for high spectral responsive photodetection phenomenon. Nanopillars for photodetection constitute a great opportunity in enhancing the light absorption efficiency along with reducing the electrical cross-section of the device. Here an analytical investigation of a proposed periodic GaAs material based half octagonal cut based vertically oriented hexagonal nanopillar array deployed over a 5um x 5um front detector’s surface has been done for attaining an optimum light absorbance by reducing the surface reflectivity of the incoming photons. The geometrical analysis of the proposed model exhibits a 0.999 absorbance and 0.97A/W photoresponsivity along with 86% EQE at 1um operating wavelength.



中文翻译:

GaAs周期半八边形切割的纳米纹理化六角形纳米柱阵列结构,可实现高响应性的光电探测器性能

有效的光吸收是高光谱响应光电检测现象的最关键因素。用于光检测的纳米柱在提高光吸收效率以及减小装置的电横截面方面构成了巨大的机会。在这里,对提议的基于GaAs材料的基于半八角形切割的垂直定向六边形纳米柱阵列进行了分析研究,该阵列布置在5um x 5um的前检测器表面上,以通过降低入射光子的表面反射率来获得最佳的光吸收率。所提出模型的几何分析显示出0.999的吸光度和0.97A / W的光响应度,以及在1um工作波长下的86%EQE。

更新日期:2021-05-05
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