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Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells
Micro and Nanostructures ( IF 3.1 ) Pub Date : 2021-05-04 , DOI: 10.1016/j.spmi.2021.106926
Junsen Mo , Qilin Hua , Wei Sha , Mingyue Yao , Jiangwen Wang , Lingyu Wan , Junyi Zhai , Tao Lin , Weiguo Hu

Piezo-phototronic effect in flexible III-nitride optoelectronic devices is of great interest in both enhanced performance and new functionalities. This work studies the carrier dynamics in flexible InGaN/GaN multiple quantum wells under varied external stress regulation. It was observed that photoluminescence (PL) intensity and carrier lifetime varied non-monotonically with increasing external stress obtaining a maximum PL enhancement of ~19%. This finding reveals the inherent mechanism of how remaining internal stress determines the optoelectronic performance throughout compensating and over-compensating for the built-in piezoelectric field in InGaN wells and will guide the further device development.



中文翻译:

InGaN / GaN多量子阱中的动态压电效应

柔性III氮化物光电器件中的压电效应对增强性能和新功能都非常感兴趣。这项工作研究了在变化的外部应力调节下的柔性InGaN / GaN多量子阱中的载流子动力学。观察到,随着外部应力的增加,光致发光(PL)强度和载流子寿命非单调变化,从而获得最大〜19%的PL增强。这一发现揭示了内部残余应力如何决定整个InGaN阱中内置压电场的补偿和过度补偿的内在机理,并将指导进一步的器件开发。

更新日期:2021-05-07
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