This brief presents the analysis and compensation technique for the class-E power amplifier (PA) considering the temperature effect of the non-zero transistor on-resistance for sensor network applications. It is shown theoretically and by simulation that the output power level and efficiency decrease with the increase of the transistor on-resistance. The transistor biasing condition for achieving near-zero temperature dependence is derived. With this, a dynamic biasing technique is proposed to stabilize the output power of the PA over a wide temperature range. A prototype class-E PA was designed and fabricated in a 0.18- $\mu \text{m}$ CMOS process. Operating at 477 MHz, the PA has 4 output stages and the measured maximum output variation is about ±0.3 dB from −40 °C to 85 °C. This measurement has a good agreement with the theoretical analysis and simulation.

中文翻译：

---

考虑晶体管导通电阻温度效应的E类功率放大器的设计

本文简要介绍了考虑传感器网络应用中非零晶体管导通电阻的温度影响的E类功率放大器（PA）的分析和补偿技术。从理论上和仿真表明，随着晶体管导通电阻的增加，输出功率水平和效率降低。得出用于实现接近零温度依赖性的晶体管偏置条件。以此为基础，提出了一种动态偏置技术，以在较宽的温度范围内稳定PA的输出功率。以0.18- $ \ mu \ text {m} $ CMOS工艺。该PA工作在477 MHz上，具有4个输出级，在−40°C至85°C范围内，测得的最大输出变化约为±0.3 dB。该测量与理论分析和仿真具有良好的一致性。