ZnO thin films were successfully deposited via spray pyrolysis technique over various substrates, including glass, silicon, and mesoporous silicon (PSi). The effect of substrate type on the surface morphological, structural, and electrical properties of ZnO thin film was investigated. Scanning Electron Microscopy confirms the morphology of the meso-PSi substrate and displays the morphologies of the deposited ZnO. The (ZnO/PSi) heterojunction shows a porous ZnO layer with a large surface area by comparison to other structures. The patterns of X-ray Diffraction exposed that the deposited ZnO films have a hexagonal wurtzite polycrystalline structure. Ultraviolet (UV) metal-semiconductor-metal photodetectors have been investigated. The fabricated (ZnO/PSi) UV photodetector showed much higher photocurrent than other structures.

ZnO薄膜通过喷雾热解技术成功地沉积在包括玻璃，硅和中孔硅（PSi）在内的各种基材上。研究了衬底类型对ZnO薄膜的表面形态，结构和电性能的影响。扫描电子显微镜证实了介孔-PSi衬底的形态并显示了沉积的ZnO的形态。与其他结构相比，（ZnO / PSi）异质结显示出具有较大表面积的多孔ZnO层。X射线衍射图表明，沉积的ZnO薄膜具有六方纤锌矿多晶结构。已经研究了紫外线（UV）金属-半导体-金属光电探测器。制成的（ZnO / PSi）紫外光电探测器显示出比其他结构更高的光电流。