Four groups of He${}^{+}$ and H${}^{+}$ with different dose combinations are implanted into GaAs crystal. After annealing, different phenomena of blisters and exfoliation appear on the surface. High resolution X-ray diffraction (HRXRD) is used to irradiate the surfaces of the four samples, and the diffraction satellite peaks are observed to move to the lower angles. The surface morphology of the four samples after annealing is observed by optical microscope. The depth of craters and the height of blisters are measured by atomic force microscope (AFM), and the critical pressure and internal stress of blisters are calculated. The damage microstructure induced by ion implantation after annealing is observed by transmission electron microscope (TEM), and the stress intensity factor at the crack tip is calculated. The different mechanisms of He${}^{+}$ and H${}^{+}$ in GaAs single crystal are compared. The dose combination of He${}^{+}$ and H${}^{+}$ is optimized to explore a more cost-effective way for GaAs film exfoliation.

四组他${}^{+}$ 和H${}^{+}$具有不同剂量组合的GaAs晶体被注入。退火后，表面出现不同的水泡和剥落现象。使用高分辨率X射线衍射（HRXRD）照射四个样品的表面，观察到衍射卫星的峰向较低的角度移动。通过光学显微镜观察退火后的四个样品的表面形态。用原子力显微镜（AFM）测量弹坑的深度和气泡的高度，计算出气泡的临界压力和内应力。用透射电子显微镜（TEM）观察退火后离子注入引起的损伤组织，并观察其应力强度因子。在裂纹尖端的计算。他的不同机制${}^{+}$ 和H${}^{+}$比较了GaAs单晶。He的剂量组合${}^{+}$ 和H${}^{+}$ 进行了优化，以探索一种更具成本效益的GaAs膜剥落方法。