The purpose of this work is to assess the crystallization kinetic properties of the direct current (DC) magnetron sputtered NiTi thin films. NiTi thin films were deposited on NaCl substrate using a magnetron sputtering method. Differential scanning calorimetry (DSC) was employed at different heating rates of 5, 20, and 30 K min⁻¹ to investigate the crystallization kinetic behavior. Only one dominant peak emerged during amorphous-crystalline transformation at different heating rates. The activation energy values during crystallization were 321.81, 288.86, and 234.56 kJ mol⁻¹ at heating rates of 5, 20, and 30 K min⁻¹, respectively. The average value of the Avrami exponent for the studied films was 2.2. The predominant mechanisms governing the nucleation and growth processes were continuous nucleation and diffusion-controlled two-dimensional growth. We envisage that the results of this systematic work will create new paradigms and opportunities in industrial-scale applications of NiTi films in microelectrochemical systems.

这项工作的目的是评估直流（DC）磁控溅射NiTi薄膜的结晶动力学特性。使用磁控溅射法将NiTi薄膜沉积在NaCl衬底上。采用差示扫描量热法（DSC）以5、20和30 K min ^-1的不同加热速率研究结晶动力学行为。在不同的加热速率下，无定形晶体转变过程中仅出现一个主峰。在加热速率分别为5、20和30 K min ^-1时，结晶过程中的活化能值为321.81、288.86和234.56 kJ mol ^-1。， 分别。研究的薄膜的Avrami指数的平均值为2.2。控制成核和生长过程的主要机制是连续成核和扩散控制的二维生长。我们设想，这项系统工作的结果将在微电化学系统中工业规模应用NiTi膜创造新的范例和机会。