In this work, we report a physics-based core model of surface potential, inversion charge, and drain current of a symmetric double-gate MOSFET with high mobility III-V channel material. The model efficiently captures all essential device physics of III-V MOSFETs. The carrier quantization effect inside the quantum well formed between oxide and channel region, is modeled by solving time-independent Schrödinger wave equation. The surface potential and inversion charge are obtained from the explicit solution of the Poisson and Schrödinger equation. A first-order correction has been applied to incorporate the modifications in sub-band energy due to applied gate bias voltages. The conduction band non-parabolicity effect is also included in our proposed model. The drain current has been derived using drift-diffusion transport including the velocity overshoot effect. The core model is free from any empirical parameters. The model predicted results have been validated with self-consistent Schrödinger-Poisson solver and commercial device simulator (TCAD) for different channel thicknesses, effective masses, a wide range of gate and drain bias voltages, and different non-parabolicity factor. The model predicted results are found to be in reasonable agreement with numerical simulation data.

在这项工作中，我们报告了具有高迁移率III-V沟道材料的对称双栅极MOSFET的表面电势，反转电荷和漏极电流的基于物理的核心模型。该模型有效地捕获了III-V MOSFET的所有基本器件物理特性。通过求解与时间无关的薛定er波动方程，可以模拟在氧化物和沟道区之间形成的量子阱内部的载流子量化效应。表面电势和反演电荷是从Poisson和Schrödinger方程的显式解中获得的。由于施加的栅极偏置电压，已应用一阶校正以将修改合并到子带能量中。导带非抛物线效应也包括在我们提出的模型中。漏极电流已通过漂移扩散传输（包括速度过冲效应）得出。核心模型没有任何经验参数。该模型的预测结果已通过自洽的Schrödinger-Poisson求解器和商用设备仿真器（TCAD）进行了验证，可用于不同的通道厚度，有效质量，宽范围的栅极和漏极偏置电压以及不同的非抛物线因子。发现模型预测结果与数值模拟数据合理吻合。以及不同的非抛物线因子。发现模型预测结果与数值模拟数据合理吻合。以及不同的非抛物线因子。发现模型预测结果与数值模拟数据合理吻合。