Integrated Si photonics has the potential to revolutionize the processing of information between different integrated chips, as well as within a single chip itself. By performing at least a part of the task with photons rather than electrons, new opportunities for broad-band low-power communication and computing are created. Herein, the theoretical description of the linear electro-optic (EO), or Pockels, effect and a newly elucidated design rule for materials evaluation is summarized. Possible applications of Si-integrated optical elements based on perovskite oxides and their heterostructures are also discussed. In particular, the Pockels effect in BaTiO₃ films grown on Si and intersubband transitions in Si-integrated perovskite quantum wells (QWs) is described.

中文翻译：

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氧化物基光电子学

集成硅光子技术有可能彻底改变不同集成芯片之间以及单个芯片内部的信息处理。通过使用光子而不是电子来执行至少一部分任务，为宽带低功耗通信和计算创造了新的机会。在此，总结了线性电光 (EO) 或普克尔斯效应的理论描述和新阐明的材料评估设计规则。还讨论了基于钙钛矿氧化物及其异质结构的 Si 集成光学元件的可能应用。特别地，描述了在 Si 上生长的BaTiO ₃薄膜中的普克尔斯效应和 Si 集成钙钛矿量子阱 (QW) 中的子带间跃迁。