Polymer photodetectors with photomultiplication (PM-PPDs) are prepared with PC₇₁BM:P3HT (1:100, wt/wt) active layers containing efficient hole-transport channels and large amount of isolated electron traps. The solid additive F₆TCNNQ is incorporated into PC₇₁BM:P3HT blend films with rather low content of 0.02 wt%. The external quantum efficiency (EQE) and response speed of PM-PPDs with F₆TCNNQ additive in the active layer are much larger than those of PM-PPDs without F₆TCNNQ additive under the same bias. The EQE values at 400 and 625 nm can reach 5240% and 3050% for the PM-PPDs with F₆TCNNQ in active layers under −9 V bias, which is among the highest values for PM-PPDs under the same bias. The performance improvement of PM-PPDs with F₆TCNNQ is primarily ascribed to the enhanced hole mobility in the active layer, leading to the increased response speed with rise time of 27.7 ms and fall time of 85 ms. This work indicates that performance of PM-PPDs can be markedly enhanced by using p-doping with strong oxidizing agents, beneficial for an enhancement in hole mobility in F₆TCNNQ:PC₇₁BM:P3HT active layers.

中文翻译：

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使用 F6TCNNQ 进行高效 p 掺杂以提高具有光电倍增功能的聚合物光电探测器的性能

具有光电倍增 (PM-PPD) 的聚合物光电探测器采用 PC ₇₁ BM:P3HT (1:100, wt/wt) 活性层制备，该活性层包含有效的空穴传输通道和大量孤立的电子陷阱。将固体添加剂 F ₆ TCNNQ 加入到 PC ₇₁ BM:P3HT 共混薄膜中，其含量相当低，仅为0.02 wt%。在相同偏置下，在有源层中添加F ₆ TCNNQ 添加剂的 PM-PPD 的外量子效率 (EQE) 和响应速度远大于不含 F ₆ TCNNQ 添加剂的 PM-PPD 。对于含 F ₆的 PM-PPD，在 400 和 625 nm 处的 EQE 值可以达到 5240% 和 3050%-9 V 偏置下有源层中的 TCNNQ，这是相同偏置下 PM-PPD 的最高值之​​一。具有 F ₆ TCNNQ的 PM-PPD 的性能改进主要归因于有源层中增强的空穴迁移率，导致响应速度增加，上升时间为 27.7 ms，下降时间为 85 ms。这项工作表明 PM-PPD 的性能可以通过使用强氧化剂的 p 掺杂显着提高，有利于提高 F ₆ TCNNQ:PC ₇₁ BM:P3HT 活性层中的空穴迁移率。