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Multistate current-induced magnetization switching in Au/Fe/MgO(001) epitaxial heterostructures
Physical Review Research Pub Date : 2021-05-03 , DOI: 10.1103/physrevresearch.3.023089
P. Gospodarič , E. Młyńczak , I. Soldatov , A. Kákay , D. E. Bürgler , L. Plucinski , R. Schäfer , J. Fassbender , C. M. Schneider

Magnetization switching using in-plane charge current recently has been widely investigated in heavy metal/ferromagnet bilayers with the switching mechanism usually attributed to the action of the spin-orbit coupling. Here we study in-plane current induced magnetization switching in model epitaxial bilayers that consist of Au(001) and Fe(001) grown on MgO(001). We use the planar Hall effect combined with magnetooptical Kerr effect (MOKE) microscopy to investigate magnetic properties of the bilayers and current-induced switching. We show that a current density beyond 1.4×107 A/cm can be employed for reproducible electrical switching of the magnetization between multiple stable states that correspond to different arrangements of magnetic domains with magnetization direction along one of the in-plane easy magnetization axes of the Fe(001) film. Lower current densities result in stable intermediate transversal resistances which are interpreted based on MOKE-microscopy investigations as resulting from the current-induced magnetic domain structure that is formed in the area of the Hall cross. We find that the physical mechanism of the current-induced magnetization switching of the Au/Fe/MgO(001) system at room temperature can be fully explained by the Oersted field, which is generated by the charge current flowing mostly through the Au layer.

中文翻译:

Au / Fe / MgO(001)外延异质结构中的多态电流感应磁化转换

最近,在重金属/铁磁体双层中,已经广泛地研究了使用平面内充电电流的磁化切换,其切换机制通常归因于自旋轨道耦合的作用。在这里,我们研究了在由MgO(001)上生长的Au(001)和Fe(001)组成的模型外延双层中的平面电流诱导的磁化转换。我们使用平面霍尔效应与磁光克尔效应(MOKE)显微镜相结合来研究双层的磁性和电流感应开关。我们显示出电流密度超过1.4×107 A / cm可用于在多个稳定状态之间进行可重复的磁化电切换,该多个稳定状态对应于沿着Fe(001)薄膜的平面内易磁化轴之一的磁化方向的不同磁畴排列。较低的电流密度会导致稳定的中间横向电阻,这是基于MOKE显微镜研究得出的,这是由霍尔交叉区域中形成的电流感应磁畴结构引起的。我们发现室温下Au / Fe / MgO(001)系统的电流感应磁化切换的物理机理可以通过Oersted场完全解释,该场是由主要流过Au层的充电电流产生的。
更新日期:2021-05-03
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