A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device is studied. The simulation results show that the optimized device can reach a high threshold voltage (from 1.24 V to 2.06 V), a large maximum drain current (from 0.925 A/mm to 1.044 A/mm), and a large gate-source capacitance (from 1837 fF/mm to 3100 fF/mm) on the condition that frequency is 1 MHz. Furthermore, based on the analysis of different combinations of the triple structural parameters, two types suitable for specific conditions are concluded, which is helpful to further improve DC and RF characteristics of E-mode AlGaN/GaN MIS-HEMT.

Silvaco TCAD软件对具有三层势垒层的E型AlGaN / GaN MIS-HEMT进行了全面研究。研究了栅介质层的几何参数，包括两侧的长度和凹陷深度，对器件的影响。仿真结果表明，优化后的器件可以达到较高的阈值电压（从1.24 V至2.06 V），较大的最大漏极电流（从0.925 A / mm至1.044 A / mm）和较大的栅极-源极电容（从1837 fF / mm至3100 fF / mm），条件是频率为1 MHz。此外，通过对三重结构参数的不同组合的分析，得出了两种适合于特定条件的类型，这有助于进一步改善E型AlGaN / GaN MIS-HEMT的DC和RF特性。