This paper describes effects of intermittent Ar/CH₄ quenching gas (QG) injection on the size and composition of Si/C nanoparticles synthesized using pulse-modulated induction thermal plasma (PMITP). Time-controlled feeding of feedstock (TCFF), with synchronous and intermittent injection of silicon feedstock powder to the PMITP, was used for high-rate production of Si nanoparticles. Also, Ar QG was supplied intermittently from the chamber wall to enhance the cooling effect further. The QG also included CH₄ as a carbon source gas for Si/C nanoparticle synthesis. Intermittent QG injection timing was studied for the composition of Si/C nanoparticles. The synthesized particles were analysed using FE-SEM, XRD, TEM, EDS, and Raman spectroscopy. Furthermore, numerical thermofluid simulation was also conducted to obtain the time varying temperature distribution in the reaction chamber, considering intermittent QG injection. From this numerical calculation, the dependence of the minimum temperature on the QG injection timing was found. The above experimental and numerical results indicate that carbon-coated Si nanoparticles can be synthesized when QG is injected at appropriate timing into the PMITP with temperatures of 1000–2000 K.

本文介绍了间歇性Ar / CH ₄淬灭气体（QG）注入对使用脉冲调制感应热等离子体（PMITP）合成的Si / C纳米颗粒的尺寸和组成的影响。定时控制进料（TCFF），同时向PMITP间歇性地注入硅原料粉末，可用于高速率生产Si纳米粒子。另外，从腔室壁间歇地供应Ar QG，以进一步提高冷却效果。QG还包括CH ₄作为用于Si / C纳米粒子合成的碳源气体。研究了Si / C纳米粒子组成的间歇QG注入时间。使用FE-SEM，XRD，TEM，EDS和拉曼光谱分析合成的颗粒。此外，考虑间歇QG注入，还进行了数值热流体模拟以获得反应室中随时间变化的温度分布。从该数值计算中，发现最低温度对QG注入时间的依赖性。以上实验和数值结果表明，在适当的时间将QG注入温度为1000–2000 K的PMITP中，可以合成碳包覆的Si纳米颗粒。