Bias stress degradation in conjugated polymer field effect transistors is a fundamental problem in disordered materials and can be traced back to interactions of the material with environmental species [H. Sirringhaus, Adv. Mater. 21, 3859–3873 (2009); S. Park et al., Adv. Funct. Mater. 30 1904590-1–1904590-21 (2020); and W. H. Lee et al., Adv. Mater. 26, 1660–1680 (2014)], as well as fabrication-induced defects [H. Klauk, Organic Electronics: Materials, Manufacturing, and Applications (Wiley, 2006) and M. Nikolka et al., Nat. Mater. 16, 356–362 (2017)]. However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has not been studied so far in high-performing n-type materials, such as N2200 [H. Yan et al., Nature 457, 679–686 (2009) and S. Brixi et al., Sci. Rep. 10, 4014 (2020)]. In this work, the performance metrics of N2200 transistors are examined with respect to dielectrics with different end groups [Cytop-M (CTL-809M) and Cytop-S (CTX809-SP2) as purchased from AGC Inc.]. We hypothesize that the polar end groups would lead to increased dipole-induced disorder and worse performance [H. Sirringhaus, Adv. Mater. 21, 3859–3873 (2009); N. B. Ukah et al., J. Polym. Sci., Part B: Polym. Phys. 51, 1533–1542 (2013); and S. Kim et al., Sci. Technol. Adv. Mater. 19, 486–494 (2018)]. The long-time annealing scheme at lower temperatures used in this paper is assumed to lead to better crystallization by allowing the crystalline domains to reorganize in the presence of the solvent [C. S. Kim et al., Appl. Phys. Lett. 93, 103302 (2008)]. It is hypothesized that the higher crystallinity could narrow down the range at which energy carriers are induced and thus decrease the gate dependence of the mobility. The results show that the dielectric end groups do not influence the bias stress stability of N2200 transistors. However, long annealing times result in a dramatic improvement in bias stress stability, with the most stable devices having a mobility that is only weakly dependent on or independent of gate voltage.

中文翻译：

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介电端基对N2200有机场效应晶体管的正偏置应力稳定性的影响

共轭聚合物场效应晶体管中的偏置应力退化是无序材料中的一个基本问题，并且可以追溯到材料与环境物种的相互作用[H．Sirringhaus，高级 母校 21，3859-3873（2009）; S.Park等。，高级 功能 母校 30 1904590-1–1904590-21（2020）；和WH Lee等。，高级 母校 26，1660至1680年（2014）]，以及制造引起的缺陷[H. Klauk，有机电子：材料，制造和应用（Wiley，2006年）和M. Nikolka等。，纳特。母校 16，356–362（2017）]。但是，到目前为止，尚未在高性能n型材料（例如N2200 [H. N. N。]， H.N.，M.，H.，H.，M.，H.，1994，J.Med.Chem。，2000，2，2，3，4，5，5，6，7，7，6，7，6，7，6，7，6，7，9，9，8，9，9，9，9，9，9，9，9，9，9，8中，7）中研究了聚合物栅极电介质的端基和相关的偶极子引起的无序对偏置应力稳定性的影响。严等人。，自然457，679-686（2009）和S. Brixi等。，科学。代表。10，4014（2020）]。在这项工作中，针对具有不同端基的电介质[从AGC Inc.购买的Cytop-M（CTL-809M）和Cytop-S（CTX809-SP2）]，检查了N2200晶体管的性能指标。我们假设极性末端基团会导致偶极子诱发的疾病增加，并导致较差的表现[H. Sirringhaus，高级 母校 21岁，3859–3873（2009）；NB Ukah等。，J。Polym。科学，B部分：Polym。物理 51，1533年至1542年（2013年）; 和S. Kim等。，科学。技术。进阶 母校 19，486-494（2018）]。通过在溶剂的存在下使晶畴重新组织，可以假定本文中使用的低温长时间退火方案可导致更好的结晶[CS Kim等。，应用 物理 来吧 93，103302（2008）]。据推测，较高的结晶度可以缩小诱导能量载流子的范围，从而降低迁移率的栅极依赖性。结果表明，介电端基不影响N2200晶体管的偏置应力稳定性。但是，较长的退火时间可显着改善偏置应力的稳定性，而最稳定的器件的迁移率仅微弱地依赖于或不依赖于栅极电压。