Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications. However, conventional TFETs introduce both random dopant fluctuations and ambipolar current issues at negative gate voltages for sub-6-nm technology nodes. In this study, we address the performance of charge plasma-driven doping-less TFETs, including sub-3-nm thick compact drain (CD) geometry/SiGe-channel/Ge source layers for suitable bandgap engineering. An ultrathin CD frame and heteromaterials are adopted for use as channels/sources to improve the ambipolarity and ON-state features, respectively. Simulation demonstrates a clear reduction in the ambipolar current from 3.3 × 10⁻¹⁴ to 3.0 × 10⁻¹⁷ A at gate (V_G)/drain (V_D) voltages of −1.5/1.0 V and an enhancement in the ON-current from 2.0 × 10⁻⁵ to 8.6 × 10⁻⁵ A at V_G = 1.5 and V_D = 1.0 V, compared with conventional TFETs. In addition, diverse fabrication-friendly metals applicable to industry fieldwork sites are tested to determine how the metal work functions influence the outputs. The use of Ti/W/Ni as the drain/channel/source materials, respectively, yields an enhanced ambipolar current of 1.2 × 10⁻²⁰ A and an ON-current of 3.9 × 10⁻⁵ A.

中文翻译：

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紧凑型Si漏框/Si0.6Ge0.4沟道/ Ge源极的无掺杂隧道场效应晶体管

隧道场效应晶体管（TFET）作为低功耗应用中的互补金属氧化物半导体的有前途替代品已引起了极大的兴趣。然而，对于6纳米以下的技术节点，传统的TFET在负栅极电压处会引入随机掺杂物波动和双极性电流问题。在这项研究中，我们解决了电荷等离子驱动的无掺杂TFET的性能，包括适用于带隙工程的亚3纳米厚紧凑型漏极（CD）几何形状/ SiGe沟道/ Ge源极层。采用超薄CD框架和异质材料作为通道/源，分别改善双极性和导通状态特征。仿真表明双极性电流从3.3×10 ^-14明显减小到3.0×10 栅极（V _G）/漏极（V _D）电压为-1.5 / 1.0 V时为^-17 A，并且 在V _G = 1.5和V时，导通电流从2.0×10 ^-5增大到8.6×10 ^-5 A与传统的TFET相比，_D = 1.0V。此外，还测试了适用于工业现场工作的各种易于加工的金属，以确定金属的工作功能如何影响输出。分别使用Ti / W / Ni作为漏极/沟道/源极材料可产生1.2×10 ^-20  A的增强双极性电流和3.9×10 ^-5  A的导通电流。